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1N5822 1W Schottky Diode
₹8.00 Excl. GST 18%
- Maximum Repetitive Peak Reverse Voltage (VRRM): 40V.
- Maximum RMS voltage (VRMS): 28V.
- Maximum Average Forward Rectified Current (IF(AV)): 3A.
- DC Blocking Voltage (VR): 40V.
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The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features:
- Extremely Low VF
- Low Power Loss/High Efficiency
- Low Stored Charge, Majority Carrier Conduction
Specifications:
| Maximum Repetitive Peak Reverse Voltage (V) | 40 |
| Maximum RMS Voltage (V) | 28 |
| Maximum Average Forward Rectified Current (A) | 3 |
| Operating Junction Temperature (°C) | – 65 to + 125 |
| Storage condition (℃) | – 65 to 125 |
| Length (mm) | 9 |
| Width (mm) | 5 (Body Diameter) |
| Weight (gm) | 1 (approx) (each) |
Package Includes:
1 x 1N5822 1W Schottky Diode.
*Product Images are shown for illustrative purposes only and may differ from actual product.
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