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BD139 NPN Bipolar Medium Power Transistor TO-126 Package
₹8.00 Excl. GST 18%
- Polarity: NPN
- Collector−Emitter Voltage (VCEO): 80V
- Continuous Collector Current (Ic): 1.5A
- Power Dissipation (Pd): 12.5W
- Operating Temperature Range: -55 to 150°C
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Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits . BD139 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:
- Low saturation voltage.
- Simple drive requirements.
- High safe operating area.
- For low distortion complementary designs.
- Easy to carry and handle.
Specifications:
| Transistor Polarity | NPN |
| Collector−Emitter Voltage (VCEO) | 80V |
| Collector−Base Voltage (VCBO) | 80V |
| Emitter−Base Voltage (VEBO) | 5V |
| Continuous Collector Current (Ic) | 1.5A |
| Continuous Base Current (Ib) | 500mA |
| Power Dissipation (Pd) | 12.5W |
| Operating Temperature Range | -55 to 150°C |
| DC Current Gain (hFE) | 40-250 |
| Thermal Resistance (ΘJA) | 100°C/W |
| Thermal Resistance (ΘJC) | 10°C/W |
| Length (mm) | 7.5 |
| Width (mm) | 2.5 |
| Height (mm) | 10 |
Package Includes:
1 x BD139 NPN Bipolar Medium Power Transistor TO-126 Package.
*Product Images are shown for illustrative purposes only and may differ from actual product.
| Weight | 0.01 kg |
|---|---|
| Dimensions | 4 × 2 × 2 cm |
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