BD139 NPN Bipolar Medium Power Transistor TO-126 Package

8.00 Excl. GST 18%

In stock

  1. Polarity: NPN
  2. Collector−Emitter Voltage (VCEO): 80V
  3. Continuous Collector Current (Ic): 1.5A
  4. Power Dissipation (Pd): 12.5W
  5. Operating Temperature Range: -55 to 150°C
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Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits . BD139 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:

  • Low saturation voltage.
  • Simple drive requirements.
  • High safe operating area.
  • For low distortion complementary designs.
  • Easy to carry and handle.

Specifications:

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 80V
Collector−Base Voltage (VCBO) 80V
Emitter−Base Voltage (VEBO) 5V
Continuous Collector Current (Ic) 1.5A
Continuous Base Current (Ib) 500mA
Power Dissipation (Pd) 12.5W
Operating Temperature Range -55 to 150°C
DC Current Gain (hFE) 40-250
Thermal Resistance (ΘJA) 100°C/W
Thermal Resistance (ΘJC) 10°C/W
Length (mm) 7.5
Width (mm) 2.5
Height (mm) 10

Package Includes:

1 x BD139 NPN Bipolar Medium Power Transistor TO-126 Package.


*Product Images are shown for illustrative purposes only and may differ from actual product.


Weight 0.01 kg
Dimensions 4 × 2 × 2 cm

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