Roll over image to zoom in
IRF3205 N-Channel HEXFET Power MOSFET TO-220 Package
₹40.00 Excl. GST 18%
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- Advanced process technology
- Power dissipation Pd of 130W at 25°C
- On Resistance Rds(on) of 44mohm at Vgs of 10V
✅ Shipping Charge Only Rs.49
✅ Free Delivery on all Orders Above Rs.999
✅ All Orders Shipped within 24 Hours
✅ GST Input Tax Credit is available
The IRF3205 MOSFET from International Rectifier is 100V single N-channel HEXFET power MOSFET in the TO-220 package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.
Note: Image may vary from actual product in terms of Manufacturer/Brand name according to the availability.
Features:
- Gate to source voltage is ±20V.
- On-Resistance Rds(on) of 8mohm at Vgs of 10V.
- Power dissipation (Pd) of 130W at 25°C.
- Continuous drain current (Id) of 110A at Vgs 10V and 25°C.
- Operating junction temperature range from -55°C to 175°C.
- Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.
Specifications:
| Package/Case | TO-220 |
| Mounting Type | Through Hole |
| Product Series | IRF3205 |
| No. of Output | 1 |
| Output Type | Analog Voltage |
| Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 110A |
| On – Drain-Source Resistance (Rds) | 8mΩ |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 200 nC |
| Power Dissipation(Pd) | 200W |
Package Includes:
1 x IRF3205 N-Channel HEXFET Power MOSFET.
*Product Images are shown for illustrative purposes only and may differ from actual product.
Reviews
There are no reviews yet.