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IRF540N MOSFET TO-220
IRF540N MOSFET TO-220
  1. IRF540N MOSFET TO-220

IRF540 N-Channel HEXFET Power MOSFET TO-220 Package

₹24.00 Excl. GST 18%

Out of stock

  1. Drain to source voltage Vds is 100V
  2. Gate to source voltage is ±20V
  3. On Resistance Rds(on) of 44mohm at Vgs of 10V
  4. Power dissipation Pd of 130W at 25°C
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SKU: RC-3921 Category: Tags: ,


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IRF540N third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 130 W.

 Features:

  • Drain to source voltage Vds is 100V.
  • Gate to source voltage is ±20V.
  • Power dissipation Pd of 130W at 25°C.
  • On Resistance Rds(on) of 44mohm at Vgs of 10V.
  • Continuous drain current Id of 33A at Vgs 10V and 25°C.
  • Operating junction temperature range from -55°C to 175°C.
  • Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.

Specifications:

Package/Case TO-220-3
Mounting Type Through Hole
Product Series IRF540
Vds – Drain-Source Breakdown Voltage 100 V
Id – Continuous Drain Current 33 A
No. of Output 1
Output Type Analog Voltage
Polarity N-Channel
Dimensions in mm (LxWxH) 10 x 4.4 x 15.65
Rds On – Drain-Source Resistance 44 mOhms
Vgs – Gate-Source Voltage 20 V
Qg – Gate Charge 47.3 nC
Pd – Power Dissipation 130 W

Package Includes:

1 x IRF540 N-Channel HEXFET Power MOSFET TO-220 Package

*Product Images are shown for illustrative purposes only and may differ from actual product.

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