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IRF540 N-Channel HEXFET Power MOSFET TO-220 Package
₹24.00 Excl. GST 18%
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On Resistance Rds(on) of 44mohm at Vgs of 10V
- Power dissipation Pd of 130W at 25°C
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Description
IRF540N third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 130 W.
Features:
- Drain to source voltage Vds is 100V.
- Gate to source voltage is ±20V.
- Power dissipation Pd of 130W at 25°C.
- On Resistance Rds(on) of 44mohm at Vgs of 10V.
- Continuous drain current Id of 33A at Vgs 10V and 25°C.
- Operating junction temperature range from -55°C to 175°C.
- Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.
Specifications:
| Package/Case | TO-220-3 |
| Mounting Type | Through Hole |
| Product Series | IRF540 |
| Vds – Drain-Source Breakdown Voltage | 100 V |
| Id – Continuous Drain Current | 33 A |
| No. of Output | 1 |
| Output Type | Analog Voltage |
| Polarity | N-Channel |
| Dimensions in mm (LxWxH) | 10 x 4.4 x 15.65 |
| Rds On – Drain-Source Resistance | 44 mOhms |
| Vgs – Gate-Source Voltage | 20 V |
| Qg – Gate Charge | 47.3 nC |
| Pd – Power Dissipation | 130 W |
Package Includes:
1 x IRF540 N-Channel HEXFET Power MOSFET TO-220 Package
*Product Images are shown for illustrative purposes only and may differ from actual product.
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