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IRF640 MOSFET – 200V 18A N-Channel Power MOSFET TO-220 Package
₹46.00 Excl. GST 18%
- Drain to source voltage Vds: 200V
- Gate to source voltage: 20V
- On Resistance Rds(on): 0.15ohm
- Continuous Drain Current (Id): 18A
- Power dissipation Pd: 150W
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IRF640 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 150 W.
Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Specifications:
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 200V |
| Continuous Drain Current (Id) | 18A |
| Drain-Source Resistance (Rds On) | 0.15Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 70 nC |
| Operating Temperature Range | -55 ~ 150°C |
| Power Dissipation (Pd) | 150W |
Package Includes:
1 x IRF640 MOSFET – 200V 18AOS N-Channel Power MOSFET TO-220 Package.
*Product Images are shown for illustrative purposes only and may differ from actual product.
| Weight | 0.005 kg |
|---|---|
| Dimensions | 3 × 2 × 1 cm |
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