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IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package
₹24.00 Excl. GST 18%
- Drain to source voltage Vds: 55V
- Gate to source voltage: ±20V
- Continuous Drain Current (Id): 49A
- Power dissipation Pd: 94W
- On Resistance Rds(on): 0.0175ohm
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IRFZ44N is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
Specifications:
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 49A |
| Drain-Source Resistance (Rds On) | 0.0175Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 63 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 94W |
Package Includes:
1 x IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package.
*Product Images are shown for illustrative purposes only and may differ from actual product.
| Weight | 0.005 kg |
|---|---|
| Dimensions | 3 × 2 × 1 cm |
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