MJE350 PNP Bipolar Power Transistor TO-126 Package

14.00 Excl. GST 18%

In stock

  1. Polarity: PNP
  2. Collector−Emitter Voltage (VCEO): 300V
  3. Continuous Collector Current (Ic): 0.5A
  4. Power Dissipation (Pd): 20.8W
  5. Operating Temperature Range: -55 to 150°C
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MJE350 is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:

  • High DC current gain.
  • Low collector−emitter saturation voltage.
  • High current−gain − bandwidth product.
  • Annular construction for low leakage.
  • Complementary NPN – PNP devices.

Specifications:

Transistor Polarity PNP
Collector−Emitter Voltage (VCEO) 300V
Collector−Base Voltage (VCBO) 300V
Emitter−Base Voltage (VEBO) 3V
Continuous Collector Current (Ic) 0.5A
Power Dissipation (Pd) 20.8W
Operating Temperature Range -55 to 150°C
DC Current Gain (hFE) 30-240
Length 7.5mm
Width 2.5mm
Height 10mm

Package Includes:

1 x MJE350 PNP Bipolar Power Transistor.


*Product Images are shown for illustrative purposes only and may differ from actual product.


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