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MJE350 PNP Bipolar Power Transistor TO-126 Package
₹14.00 Excl. GST 18%
- Polarity: PNP
- Collector−Emitter Voltage (VCEO): 300V
- Continuous Collector Current (Ic): 0.5A
- Power Dissipation (Pd): 20.8W
- Operating Temperature Range: -55 to 150°C
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MJE350 is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:
- High DC current gain.
- Low collector−emitter saturation voltage.
- High current−gain − bandwidth product.
- Annular construction for low leakage.
- Complementary NPN – PNP devices.
Specifications:
| Transistor Polarity | PNP |
| Collector−Emitter Voltage (VCEO) | 300V |
| Collector−Base Voltage (VCBO) | 300V |
| Emitter−Base Voltage (VEBO) | 3V |
| Continuous Collector Current (Ic) | 0.5A |
| Power Dissipation (Pd) | 20.8W |
| Operating Temperature Range | -55 to 150°C |
| DC Current Gain (hFE) | 30-240 |
| Length | 7.5mm |
| Width | 2.5mm |
| Height | 10mm |
Package Includes:
1 x MJE350 PNP Bipolar Power Transistor.
*Product Images are shown for illustrative purposes only and may differ from actual product.
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