MJE2955T PNP Power Transistor TO-220 Package

24.00 Excl. GST 18%

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  1. DC Current Gain Specified to 10 Amperes
  2. High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc
  3. Type Designator: MJE2955T
  4. Material of Transistor: Si
  5. Polarity: PNP
  6. Maximum Emitter-Base Voltage |VEB|: 5V
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MJE2955T PNP Power Transistor TO-220 Package. MJE2955T is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. It is intended for power switching circuits and general-purpose amplifiers. The complementary NPN type is MJE3055T.

Application:
  • General–Purpose Amplifier
  • Switching Application

Features:

  • High DC current gain.
  • Low collector−emitter saturation voltage.
  • High current−gain − bandwidth product.
  • Annular construction for low leakage.
  • These devices are Pb−Free and are RoHS compliant.

Specifications:

Transistor Polarity PNP
Collector−Emitter Voltage (VCEO) 60VDC
Collector−Base Voltage (VCBO) 70VDC
Emitter−Base Voltage (VEBO) 5VDC
Continuous Collector Current (Ic) 10ADC
Continuous Base Current (Ib) 6ADC
Power Dissipation (Pd) 75W
Operating Temperature Range -55 to 150°C
DC Current Gain (hFE) 20-70
Length (mm) 10
Width (mm) 4
Height (mm) 15

Package Includes:

1 x MJE2955T PNP Power Transistor TO-220 Package.


*Product Images are shown for illustrative purposes only and may differ from actual product.


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