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P80NF55 N-Channel Power MOSFET TO-220 Package
₹48.00 Excl. GST 18%
- Drain-Source Volt (Vds): 55V
- Drain-Gate Volt (Vdg): 55V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 80A
- Power Dissipation (Ptot): 300W
P80NF55 power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Applications:
- Advanced Process Technology
- Ultra Low On-Resistance
- Fast Switching
- Fully Avalanche Rated
Features:
- 100% avalanche tested.
- Designed for automotive applications and AEC-Q101 qualified.
- Low input capacitance and gate charge.
- Low gate input resistance.
Specifications:
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 80A |
| Drain-Source Resistance (Rds On) | 8 Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 155 nC |
| Operating Temperature Range | -55°C to 175°C |
| Power Dissipation (Pd) | 300W |
Package Includes:
1 x P80NF55 N-Channel Power MOSFET TO-220 Package.
Additional information
| Weight | 0.002 kg |
|---|---|
| Dimensions | 1 × 1 × 3 cm |
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