P80NF55 N-Channel Power MOSFET TO-220 Package

48.00 Excl. GST 18%

In stock

  1. Drain-Source Volt (Vds): 55V
  2. Drain-Gate Volt (Vdg): 55V
  3. Gate-Source Volt (Vgs): 20V
  4. Drain Current (Id): 80A
  5. Power Dissipation (Ptot): 300W
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P80NF55 power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Applications:

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Fast Switching
  • Fully Avalanche Rated

Features:

  • 100% avalanche tested.
  • Designed for automotive applications and AEC-Q101 qualified.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

Specifications:

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 80A
Drain-Source Resistance (Rds On) 8 Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 155 nC
Operating Temperature Range -55°C to 175°C
Power Dissipation (Pd) 300W

Package Includes:

1 x P80NF55 N-Channel Power MOSFET TO-220 Package.


*Product Images are shown for illustrative purposes only and may differ from actual product.


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