2N3019 NPN Silicon Planar Transistor TO-39 Metal Package

24.00 Excl. GST 18%

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  1. Transistor Polarity: NPN
  2. Collector Emitter Voltage: 80V
  3. DC Collector Current: 1A
  4. Power Dissipation Pd: 5W
  5. Package: TO-39 Metal
  6. Transistor Mounting: Through Hole
  7. Operating Temperature Range: -65 to +200
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2N3019 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

Features:

  • Metal TO-39 Can package.
  • Fast switching speed.
  • Full-voltage operation.
  • Advanced process technology.
  • Low error voltage.
  • High power and current handling capability.

Specifications:

Transistor Polarity NPN
Collector-Base Voltage (VCBO) 140VDC
Collector-Emitter Voltage (VCEO) 80VDC
Emitter-Base Voltage (VEBO) 7VDC
Continuous Collector Current (IC) 1A
Input Capacitance (Cib) 60pF
Output Capacitance (Cob) 12pF
Power Dissipation Pd 5W
Operating Temperature Range (ºC) -65 to +200
DC Current Gain (hFE) 100-300
Package TO-39
Transistor Mounting Through Hole

Package Includes:

1 x 2N3019 NPN Silicon Planar Transistor TO-39 Metal Package.


*Product Images are shown for illustrative purposes only and may differ from actual product.


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