MJE3055T NPN Power Transistor TO-220 Package

18.00 Excl. GST 18%

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  1. Polarity: NPN
  2. Collector−Emitter Voltage (VCEO): 60V
  3. Continuous Collector Current (Ic): 10A
  4. Power Dissipation (Pd): 75W
  5. Operating Temperature Range: -55 to 150°C
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MJE3055T NPN Power Transistor TO-220 Package. MJE3055T is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:

  • High DC current gain
  • Low collector−emitter saturation voltage
  • High current−gain − bandwidth product
  • Annular construction for low leakage
  • These devices are Pb−Free and are RoHS compliant

Specifications:

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 60VDC
Collector−Base Voltage (VCBO) 70VDC
Emitter−Base Voltage (VEBO) 5VDC
Continuous Collector Current (Ic) 10ADC
Continuous Base Current (Ib) 6ADC
Power Dissipation (Pd) 75W
Operating Temperature Range -55 to 150°C
DC Current Gain (hFE) 20-7
Length  10mm
Width 4mm
Height  16mm

Package Includes:

1 x MJE3055T NPN Power Transistor TO-220 Package.


*Product Images are shown for illustrative purposes only and may differ from actual product.


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